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LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FOR DISPLAYS
被引:11
作者
:
HSEIH, BC
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
HSEIH, BC
[
1
]
HATALIS, MK
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
HATALIS, MK
[
1
]
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
机构:
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
GREVE, DW
[
1
]
机构
:
[1]
LEHIGH UNIV, DEPT COMP SCI & ELECT ENGN, BETHLEHEM, PA 18015 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1988年
/ 35卷
/ 11期
关键词
:
D O I
:
10.1109/16.7395
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1842 / 1845
页数:4
相关论文
共 27 条
[1]
6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL
BRODY, TP
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
BRODY, TP
ASARS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
ASARS, JA
DIXON, GD
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
DIXON, GD
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(11)
: 995
-
1001
[2]
EDULBEHRAM JJ, 1986, THESIS MIT
[3]
CADMIUM SELENIDE THIN-FILM TRANSISTORS
ERSKINE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
ZENITH RADIO CORP,CHICAGO,IL 60639
ZENITH RADIO CORP,CHICAGO,IL 60639
ERSKINE, JC
CSERHATI, A
论文数:
0
引用数:
0
h-index:
0
机构:
ZENITH RADIO CORP,CHICAGO,IL 60639
ZENITH RADIO CORP,CHICAGO,IL 60639
CSERHATI, A
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978,
15
(06):
: 1823
-
1835
[4]
ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
FOSSUM, JG
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
ORTIZCONDE, A
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
SHICHIJO, H
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BANERJEE, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
: 1878
-
1884
[5]
TRAPS AT THE AL2O3/CDSE INTERFACE
FREEMAN, EC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
FREEMAN, EC
LUO, FC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
LUO, FC
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
: 5294
-
5303
[6]
CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
ADACHI, T
论文数:
0
引用数:
0
h-index:
0
ADACHI, T
WAKAYAMA, S
论文数:
0
引用数:
0
h-index:
0
WAKAYAMA, S
KIKUCHI, M
论文数:
0
引用数:
0
h-index:
0
KIKUCHI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(07)
: 3987
-
3992
[7]
HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS
HATALIS, MK
论文数:
0
引用数:
0
h-index:
0
HATALIS, MK
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
GREVE, DW
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(08)
: 361
-
364
[8]
LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS
HATALIS, MK
论文数:
0
引用数:
0
h-index:
0
HATALIS, MK
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
GREVE, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(07)
: 2260
-
2266
[9]
POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS
HAWKINS, WG
论文数:
0
引用数:
0
h-index:
0
HAWKINS, WG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(04)
: 477
-
481
[10]
HSEIH BC, UNPUB CAPACITANCE VO
←
1
2
3
→
共 27 条
[1]
6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL
BRODY, TP
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
BRODY, TP
ASARS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
ASARS, JA
DIXON, GD
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235
DIXON, GD
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(11)
: 995
-
1001
[2]
EDULBEHRAM JJ, 1986, THESIS MIT
[3]
CADMIUM SELENIDE THIN-FILM TRANSISTORS
ERSKINE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
ZENITH RADIO CORP,CHICAGO,IL 60639
ZENITH RADIO CORP,CHICAGO,IL 60639
ERSKINE, JC
CSERHATI, A
论文数:
0
引用数:
0
h-index:
0
机构:
ZENITH RADIO CORP,CHICAGO,IL 60639
ZENITH RADIO CORP,CHICAGO,IL 60639
CSERHATI, A
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978,
15
(06):
: 1823
-
1835
[4]
ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
FOSSUM, JG
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
ORTIZCONDE, A
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
SHICHIJO, H
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BANERJEE, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
: 1878
-
1884
[5]
TRAPS AT THE AL2O3/CDSE INTERFACE
FREEMAN, EC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
FREEMAN, EC
LUO, FC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
LUO, FC
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
: 5294
-
5303
[6]
CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
ADACHI, T
论文数:
0
引用数:
0
h-index:
0
ADACHI, T
WAKAYAMA, S
论文数:
0
引用数:
0
h-index:
0
WAKAYAMA, S
KIKUCHI, M
论文数:
0
引用数:
0
h-index:
0
KIKUCHI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(07)
: 3987
-
3992
[7]
HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS
HATALIS, MK
论文数:
0
引用数:
0
h-index:
0
HATALIS, MK
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
GREVE, DW
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(08)
: 361
-
364
[8]
LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS
HATALIS, MK
论文数:
0
引用数:
0
h-index:
0
HATALIS, MK
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
GREVE, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(07)
: 2260
-
2266
[9]
POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS
HAWKINS, WG
论文数:
0
引用数:
0
h-index:
0
HAWKINS, WG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(04)
: 477
-
481
[10]
HSEIH BC, UNPUB CAPACITANCE VO
←
1
2
3
→