RADIATION TOLERANCE OF SINGLE-SIDED SILICON MICROSTRIPS

被引：35

作者：

HOLMESSIEDLE, A

ROBBINS, M

WATTS, S

ALLPORT, P

BRENNER, R

MOSER, HG

ROE, S

STRAVER, J

WEILHAMMER, P

CHOCHULA, P

MIKULEC, I

MOSZCZYNSKI, S

TURALA, M

DABROWSKI, W

GRYBOS, P

IDZIK, M

LOUKAS, D

MISIAKOS, K

SIOTIS, I

ZACHARIADOU, K

DULINSKI, W

MICHELE, J

SCHAEFFER, M

TURCHETTA, R

BOOTH, P

RICHARDSON, J

SMITH, N

GILL, K

HALL, G

SACHDEVA, R

SOTTHIBANDHU, S

VITE, D

WHEADON, R

ARRIGHI, C

DELPIERRE, P

HABRARD, MC

CLEMENS, JC

MOUTHUY, T

AVSET, BS

EVENSEN, L

HANNEBORG, A

HANSEN, TA

BISELLO, D

GIRALDO, A

PACCAGNELLA, A

KURCHANINOV, L

SPIRITI, E

APSIMON, R

GIUBELLINO, P

RAMELLO, L

机构：

[1] UNIV CAMBRIDGE,CAMBRIDGE,CAMBS,ENGLAND

[2] CERN,GENEVA,SWITZERLAND

[3] COMENIUS UNIV BRATISLAVA,BRATISLAVA,SLOVAKIA

[4] INST NUCL PHYS,KRAKOW,POLAND

[5] FAC PHYS & NUCL TECHNIQUES CRACOW,KRAKOW,POLAND

[6] DEMOKRITOS NATL CTR SCI RES,GR-15310 ATHENS,GREECE

[7] LEPSI,STRASBOURG,FRANCE

[8] UNIV LIVERPOOL,LIVERPOOL,ENGLAND

[9] IMPERIAL COLL SCI TECHNOL & MED,LONDON,ENGLAND

[10] CPPM,MARSEILLE,FRANCE

[11] UNIV OSLO,OSLO,NORWAY

[12] SENTER IND FORSKNING,OSLO,NORWAY

[13] INFN,PADUA,ITALY

[14] INFN,ROME,ITALY

[15] RUTHERFORD APPLETON LAB,CHILTON,OXON,ENGLAND

[16] INFN,TURIN,ITALY

[17] IHEP,VIENNA,AUSTRIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 339卷 / 03期

关键词：

D O I：

10.1016/0168-9002(94)90188-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The RD20 collaboration is investigating the design and operation of an LHC inner tracking detector based on silicon microstrips. Measurements have been made on prototype detectors after irradiation with electrons, neutrons, photons, and protons for doses up to 5 Mrad and fluences up to 10(15) particles/cm(2). The annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime at the LHC, is shown to be strongly inhibited by cooling below room temperature. Detailed results are presented on the critical issue of microstrip capacitance. We have also investigated bulk damage caused by high-energy protons, interstrip isolation after neutron irradiation, and MOS capacitors irradiated with electrons and photons.

引用

页码：511 / 523

页数：13

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