HIGH-PERFORMANCE 1.5-MU-M DISTRIBUTED FEED BACK LASERS WITH STRAINED MULTIQUANTUM WELL STRUCTURE GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (CHEMICAL BEAM EPITAXY)

被引:3
作者
NAKAO, M
IGA, R
YAMADA, T
SUGIURA, H
机构
[1] NTT Opto-electronics Laboratories, Atsugi, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 11A期
关键词
DFB LASER; CHEMICAL BEAM EPITAXY; MOMBE; INGAASP; STRAINED MQW;
D O I
10.1143/JJAP.31.L1549
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy) technique was used to make active layers for Distributed Feed Back (DFB) lasers. Typical characteristics of these lasers-for example a threshold current of 6 mA and a slope efficiency of 0.3 mW/mA per facet-reflect the high homogeneity and high uniformity of the grown layers. The values referred here are the best ever reported for a CBE-grown active layer.
引用
收藏
页码:L1549 / L1551
页数:3
相关论文
共 9 条
[1]   OPTOELECTRONIC DEVICES BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
GOLDSTEIN, L ;
STARCK, C ;
EMERY, JY ;
GABORIT, F ;
BONNEVIE, D ;
POINGT, F ;
LAMBERT, M .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :157-161
[2]   GROWTH OF HIGHLY UNIFORM INP/GAINAS/GAINASP HETEROSTRUCTURES BY MOMBE FOR DEVICE INTEGRATION [J].
HEINECKE, H ;
BAUR, B ;
EMEIS, N ;
SCHIER, M .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :140-144
[3]   CHARACTERIZATION OF INGAASP INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY FOR SEMICONDUCTOR-LASERS BY PHOTOLUMINESCENCE INVESTIGATION WITH HIGH-POWER YAG-LASER EXCITATION [J].
NAKAO, M ;
SATO, K ;
OISHI, M ;
ITAYA, Y ;
IMAMURA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1722-1728
[4]  
SUGIURA H, 1992, IN PRESS J CRYST GRO
[5]   STRUCTURES FOR IMPROVED 1.5 MU-M WAVELENGTH LASERS GROWN BY LP-OMVPE-INGAAS-INP STRAINED-LAYER QUANTUM-WELLS A GOOD CANDIDATE [J].
THIJS, PJA ;
MONTIE, EA ;
VANDONGEN, T .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :731-740
[6]   1.5 MU-M WAVELENGTH INGAAS/INGAASP DISTRIBUTED FEEDBACK MULTI-QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
CHOA, FS ;
WU, MC ;
CHEN, YK ;
LOGAN, RA ;
TANBUNEK, T ;
CHU, SNG ;
TAI, K ;
SERGENT, AM ;
WECHT, KW .
APPLIED PHYSICS LETTERS, 1991, 59 (19) :2375-2377
[7]  
TSANG WT, 1989, VLSI ELECTRONICS MIC, V21
[8]   CBE GROWTH OF LOW THRESHOLD 1.5 MU-M INGAAS/INGAASP MQW LASERS [J].
YAMADA, T ;
IGA, R ;
NOGUCHI, Y ;
SUGIURA, H .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :177-179
[9]   LOW-THRESHOLD INGAAS/INGAASP MULTIPLE QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY [J].
YAMADA, T ;
IGA, R ;
NOGUCHI, Y ;
SUGIURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1741-L1743