CBE GROWTH OF LOW THRESHOLD 1.5 MU-M INGAAS/INGAASP MQW LASERS

被引：6

作者：

YAMADA, T

IGA, R

NOGUCHI, Y

SUGIURA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90386-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports on low-threshold InGaAs/InGaAsP multiple quantum well (MQW) lasers emitting at a wavelength of 1.52-mu-m. Separate confinement heterostructure (SCH) lasers were grown using chemical beam epitaxy (CBE) with source material pressure-control systems. A continuous wave threshold current of 12 mA and internal quantum efficiency of 73% (both facets) are observed in uncoated double-channel planar buried heterostructure (DCPBH) lasers. The internal loss is 15 cm-1. More than 90% of 50 laser chips have a threshold current of 15 +/- 3 mA.

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收藏

页码：177 / 179

页数：3

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