DEPTH DISTRIBUTION OF DEFECTS IN MG-ION AND CD-ION IMPLANTED GAAS

被引：10

作者：

AOKI, K ^{[1
]}

GAMO, K ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 02期

关键词：

D O I：

10.1143/JJAP.15.405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：405 / 406

页数：2

相关论文

共 8 条

[1] PHOTOLUMINESCENCE STUDY OF CD-ION IMPLANTED N-GAAS
AOKI, K
GAMO, K
MASUDA, K
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 145 - 149
[2] ARNOLD GW, 1971, ION IMPLANTATION SEM, P151
[3] DIFFUSION OF DEFECTS IN LOW TEMPERATURE ION IMPLANTED GAAS
GAMO, K
AOKI, K
MASUDA, K
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1118 - &
[4] ANALYSIS OF RADIATION-ENHANCED DIFFUSION OF ALUMINUM IN SILICON
ITOH, T
OHDOMARI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 434 - &
[5] JOHNSON WS, 1969, PROJECTED RANGE STAT
[6] MULLER H, 1975, ION IMPLANTATION SEM, P19
[7] SANSBURY JD, 1971, ION IMPLANTATION, P253
[8] PHOTOLUMINESCENCE OF ION-IMPLANTATION-DAMAGED TYPE GAAS
SUMMERS, CJ
MIKLOSZ, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4653 - 4656