ELECTRICAL CHARACTERISTICS OF AU SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON-BEAM ANNEALED N-TYPE (100) SILICON

被引：1

作者：

DOGHMANE, MS

BARBIER, D

LAUGIER, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983544

中图分类号：

学科分类号：

摘要：

引用

页码：297 / 301

页数：5

共 8 条

[1] PULSED ELECTRON-BEAM ANNEALING OF ARSENIC IMPLANTATION DAMAGE IN SILICON [J].

BARBIER, D ;

LAUGIER, A ;

CACHARD, A .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :411-420

[2]

BARBIER D, 1982, UNPUB P MRS S LASER

[3] MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON-BEAM ANNEALING IN ION-IMPLANTED SILICON [J].

CHEMISKY, G ;

BARBIER, D ;

LAUGIER, A .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :91-95

[4] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[5]

KIMMERLING LC, 1980, P MRS S LASER ELECTR, P385

[6] DISLOCATION DEFECT STATES IN SILICON [J].

PATEL, JR ;

KIMERLING, LC .

JOURNAL DE PHYSIQUE, 1979, 40 :67-70

[7] ELECTRICAL-PROPERTIES OF SCHOTTKY DIODES ON LASER ANNEALED SILICON SURFACES [J].

PONPON, JP ;

BUTTUNG, E ;

SIFFERT, P .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (10) :687-692

[8] ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON [J].

THOLOMIER, M ;

PITAVAL, M ;

AMBRI, M ;

BARBIER, D ;

LAUGIER, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1588-1594

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