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AN IMPROVED AU/BE CONTACT TO PARA-TYPE INP
被引:9
作者
:
HASENBERG, TC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089
HASENBERG, TC
[
1
]
GARMIRE, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089
GARMIRE, E
[
1
]
机构
:
[1]
UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 02期
关键词
:
D O I
:
10.1063/1.338188
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:808 / 809
页数:2
相关论文
共 6 条
[1]
ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
HIRAKI, A
SHUTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
SHUTO, K
KIM, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
KIM, S
KAMMURA, W
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
KAMMURA, W
IWAMI, M
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
IWAMI, M
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 611
-
612
[2]
KUPHAL E, 1980, SOLID STATE ELECTRON, V24, P69
[3]
Maissel L.I., 1970, HDB THIN FILM TECHNO, P1
[4]
IDEAL OHMIC CONTACTS TO INP
MILLS, HT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
MILLS, HT
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
HARTNAGEL, HL
[J].
ELECTRONICS LETTERS,
1975,
11
(25-2)
: 621
-
622
[5]
OHMIC CONTACTS TO PARA-TYPE INP USING BE-AU METALLIZATION
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
MCCOY, RJ
论文数:
0
引用数:
0
h-index:
0
MCCOY, RJ
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
BONNER, WA
论文数:
0
引用数:
0
h-index:
0
BONNER, WA
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(06)
: 444
-
446
[6]
METALLIZATION SYSTEMS FOR SILICON INTEGRATED CIRCUITS
TERRY, LE
论文数:
0
引用数:
0
h-index:
0
机构:
Motorola Inc., Semiconductor Products Division, Phoenix, Ariz.
TERRY, LE
WILSON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
Motorola Inc., Semiconductor Products Division, Phoenix, Ariz.
WILSON, RW
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1580
-
&
←
1
→
共 6 条
[1]
ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
HIRAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
HIRAKI, A
SHUTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
SHUTO, K
KIM, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
KIM, S
KAMMURA, W
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
KAMMURA, W
IWAMI, M
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
IWAMI, M
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 611
-
612
[2]
KUPHAL E, 1980, SOLID STATE ELECTRON, V24, P69
[3]
Maissel L.I., 1970, HDB THIN FILM TECHNO, P1
[4]
IDEAL OHMIC CONTACTS TO INP
MILLS, HT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
MILLS, HT
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,NEWCASTLE NE1 7RU,ENGLAND
HARTNAGEL, HL
[J].
ELECTRONICS LETTERS,
1975,
11
(25-2)
: 621
-
622
[5]
OHMIC CONTACTS TO PARA-TYPE INP USING BE-AU METALLIZATION
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
MCCOY, RJ
论文数:
0
引用数:
0
h-index:
0
MCCOY, RJ
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
BONNER, WA
论文数:
0
引用数:
0
h-index:
0
BONNER, WA
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(06)
: 444
-
446
[6]
METALLIZATION SYSTEMS FOR SILICON INTEGRATED CIRCUITS
TERRY, LE
论文数:
0
引用数:
0
h-index:
0
机构:
Motorola Inc., Semiconductor Products Division, Phoenix, Ariz.
TERRY, LE
WILSON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
Motorola Inc., Semiconductor Products Division, Phoenix, Ariz.
WILSON, RW
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1580
-
&
←
1
→