AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE - THE (110) ORIENTATION

被引：7

作者：

BALLINGALL, JM

WOOD, CEC

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

[2] GE,HIRST RES LAB,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：162 / 165

页数：4

共 18 条

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[9]

KITTEL C, 1976, INTRO SOLID STATE PH, P174

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JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :302-308

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