AN ADVANCED TECHNIQUE FOR FABRICATING HEMISPHERICAL-GRAINED (HSG) SILICON STORAGE ELECTRODES

被引：15

作者：

WATANABE, H ^{[1
]}

TATSUMI, T ^{[1
]}

IKARASHI, T ^{[1
]}

SAKAI, A ^{[1
]}

AOTO, N ^{[1
]}

KIKKAWA, T ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 02期

关键词：

D O I：

10.1109/16.370066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this new fabrication technology for high-density DRAM's, an electrode with an even-surface amorphous-silicon is changed to one with an uneven-surface hemispherical-grained Si (HSG-Si). This fabrication method consists of easily controllable processes: formation of smooth amorphous Si electrodes by low-pressure chemical vapor deposition followed by removal of native oxide and high-vacuum annealing. This annealing process can form HSG-Si covering the entire surface of all types of storage electrodes, including side-wall surfaces which had previously been dry-etched. The resulting storage electrode with HSG-Si can store 1.8 times as much charge as can be stored an electrode without HSG-Si. Such an increase makes it possible to reduce the height of storage electrodes. This technique is applicable to the fabrication of high-density DRAM's.

引用

页码：295 / 300

页数：6

共 18 条

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