OXIDATION OF INP IN A PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION REACTOR

被引：22

作者：

WAGER, JF ^{[1
]}

MAKKY, WH ^{[1
]}

WILMSEN, CW ^{[1
]}

MEINERS, LG ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

THIN SOLID FILMS | 1982年 / 95卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90040-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：343 / 350

页数：8

共 14 条

[1] SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN [J].

CLARK, DT ;

FOK, T .

THIN SOLID FILMS, 1981, 78 (03) :271-278

[2] CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION [J].

IMAI, Y ;

ISHIBASHI, T ;

IDA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :221-224

[3] PLASMA-GROWN OXIDE ON INP [J].

KANAZAWA, K ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L211-L213

[4] COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS [J].

KAZMERSKI, LL ;

IRELAND, PJ ;

SHELDON, P ;

CHU, TL ;

CHU, SS ;

LIN, CL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1061-1066

[5] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :655-658

[6] ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :373-379

[7] RAMAN-SCATTERING STUDY OF THE THERMAL-OXIDATION OF INP [J].

SCHWARTZ, GP ;

SUNDER, WA ;

GRIFFITHS, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :925-927

[8]

STANNARD J, 1979, J VAC SCI TECHNOL, V16, P1462, DOI 10.1116/1.570222

[9] COMPOSITION AND THERMAL-STABILITY OF THIN NATIVE OXIDES ON INP [J].

WAGER, JF ;

ELLSWORTH, DL ;

GOODNICK, SM ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :513-518

[10] THERMAL-OXIDATION OF INP [J].

WAGER, JF ;

WILMSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :812-814

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