AN IMAGE-PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY

被引：14

作者：

CHOW, DGL

MCDONALD, JF

KING, DC

SMITH, W

MOLNAR, K

STECKL, AJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1383 / 1390

页数：8

共 12 条

[1] Andrews H.C., 1970, COMPUTER TECHNIQUES
[2] BEAUCHAMP KG, 1975, WALSH FUNCTIONS THEI
[3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[4] ELLIOT DF, 1982, FAST TRANSFORMS ALGO
[5] EXPOSURE AND DEVELOPMENT MODELS USED IN ELECTRON-BEAM LITHOGRAPHY
HAWRYLUK, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01): : 1 - 17
[6] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION
KARAPIPERIS, L
ADESIDA, I
LEE, CA
WOLF, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263
[7] KERN DP, 1980, 9TH P INT S EL ION B, P326
[8] VERIFICATION OF A PROXIMITY EFFECT CORRECTION PROGRAM IN ELECTRON-BEAM LITHOGRAPHY
KRATSCHMER, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1264 - 1268
[9] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY
PARIKH, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377
[10] RABINER LR, 1975, THEORY APPLICATION D