DYNAMICS AND CONTROL OF THE CZOCHRALSKI PROCESS .2. OBJECTIVES AND CONTROL STRUCTURE DESIGN

被引：34

作者：

GEVELBER, MA

STEPHANOPOULOS, G

WARGO, MJ

机构：

[1] MIT,DEPT CHEM ENGN,INTELLIGENT SYST PROC ENGN LAB,CAMBRIDGE,MA 02139

[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 1-2期

关键词：

CRYSTALS - Growing - SEMICONDUCTOR DEVICES - Fabrication;

D O I：

10.1016/0022-0248(88)90386-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new control system design is proposed for the Czochralski process in order to improve crystal quality, particularly GaAs. An expanded set of formal control objectives are proposed based on a consideration of defect formation, segregation, and the process coupling. A control structure is developed that meets the control objectives and the restrictions posed by the batch related disturbances, system coupling, and the dynamic characteristics of the measurements, outputs, and inputs.

引用

页码：199 / 217

页数：19

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[11] BASIS OF AUTOMATIC DIAMETER CONTROL UTILIZING BRIGHT-RING MENISCUS REFLECTIONS [J].