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- [2] (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 824 - 826FUKUI, TSAITO, H
- [3] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381GAINES, JMPETROFF, PMKROEMER, HSIMES, RJGEELS, RSENGLISH, JH
- [4] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179HORIKOSHI, YKAWASHIMA, MYAMAGUCHI, H
- [5] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687HORIKOSHI, YKAWASHIMA, MYAMAGUCHI, H
- [6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102NEAVE, JHDOBSON, PJJOYCE, BAZHANG, J
- [7] ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001)[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 71 - 74OHTA, KKOJIMA, TNAKAGAWA, T
- [8] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 620 - 622PETROFF, PMGOSSARD, ACWIEGMANN, W