MECHANISMS INVOLVED IN THE GLOW-DISCHARGE DEPOSITION OF DOPED HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

KAMPAS, FJ

VANIER, PE

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90293-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：25 / 29

页数：5

共 14 条

[1]

ADLER D, 1983, J PHYSIQUE, V42, P3

[2] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[4] REACTIONS OF ATOMIC-HYDROGEN IN THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE AND REACTIVE SPUTTERING [J].

KAMPAS, FJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6408-6412

[5] DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE [J].

LONGEWAY, PA ;

ESTES, RD ;

WEAKLIEM, HA .

JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) :73-77

[6]

Mott N. F., 1979, ELECT PROCESSES NONC

[7] RADICAL SPECIES IN ARGON-SILANE DISCHARGES [J].

ROBERTSON, R ;

HILS, D ;

CHATHAM, H ;

GALLAGHER, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :544-546

[8] GROWTH AND DEFECT CHEMISTRY OF AMORPHOUS HYDROGENATED SILICON [J].

SCOTT, BA ;

REIMER, JA ;

LONGEWAY, PA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6853-6863

[9]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[10] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

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