QUANTUM-WELL WAVE-GUIDE INTENSITY MODULATOR AT VISIBLE WAVELENGTHS USING CDZNTE/ZNTE QUANTUM-WELLS

被引:30
作者
LEE, D
ZUCKER, JE
DIVINO, MD
AUSTIN, RF
FELDMAN, RD
JONES, KL
JOHNSON, AM
机构
关键词
D O I
10.1063/1.106171
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the first waveguide intensity modulator for visible wavelengths based on the quantum-confined Stark effect. The active waveguide core is composed of 58 Cd0.42Zn0.58Te/ZnTe quantum wells surrounded by Cd0.12Zn0.88Te cladding layers. We obtain > 10 dB modulation depth at 640 nm with 4 V bias in a 500-mu-m-long waveguide.
引用
收藏
页码:1867 / 1869
页数:3
相关论文
共 10 条
[1]   ZNSE/ZNSE0.92S0.08/GAAS SINGLE-CRYSTAL WAVE-GUIDES AS VISIBLE MODULATORS [J].
JUPINA, MH ;
GARMIRE, EM ;
SHIBATA, N ;
ZEMBUTSU, S .
APPLIED PHYSICS LETTERS, 1990, 57 (27) :2894-2896
[2]   MONOLITHIC INTEGRATION OF INGAASP/INP DFB LASERS AND INGAAS/INAIAS MQW OPTICAL MODULATORS [J].
KAWAMURA, Y ;
WAKITA, K ;
ITAYA, Y ;
YOSHIKUNI, Y ;
ASAHI, H .
ELECTRONICS LETTERS, 1986, 22 (05) :242-243
[3]   ROOM-TEMPERATURE EXCITONIC SATURATION IN CDZNTE/ZNTE QUANTUM-WELLS [J].
LEE, D ;
ZUCKER, JE ;
JOHNSON, AM ;
FELDMAN, RD ;
AUSTIN, RF .
APPLIED PHYSICS LETTERS, 1990, 57 (11) :1132-1134
[4]   ROOM-TEMPERATURE EXCITONIC ABSORPTION IN CDZNTE/ZNTE QUANTUM-WELLS - CONTRIBUTIONS TO EXCITON LINEWIDTH [J].
LEE, D ;
JOHNSON, AM ;
ZUCKER, JE ;
FELDMAN, RD ;
AUSTIN, RF .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6722-6724
[5]   ELECTROABSORPTION IN II-VI MULTIPLE QUANTUM-WELLS [J].
PARTOVI, A ;
GLASS, AM ;
OLSON, DH ;
FELDMAN, RD ;
AUSTIN, RF ;
LEE, D ;
JOHNSON, AM ;
MILLER, DAB .
APPLIED PHYSICS LETTERS, 1991, 58 (04) :334-336
[6]   WAVEGUIDE-TYPE OPTICAL MODULATOR OF GAAS QUANTUM WELL DOUBLE HETEROSTRUCTURES USING ELECTRIC-FIELD EFFECT ON EXCITON ABSORPTION [J].
TARUCHA, S ;
IWAMURA, H ;
SAKU, T ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (06) :L442-L444
[7]  
VALSTER A, 1991, TECHNICAL DIGEST SER, V7, P126
[8]   SHALLOW-ACCEPTOR, DONOR, FREE-EXCITON, AND BOUND-EXCITON STATES IN HIGH-PURITY ZINC TELLURIDE [J].
VENGHAUS, H ;
DEAN, PJ .
PHYSICAL REVIEW B, 1980, 21 (04) :1596-1609
[9]  
YAN RH, 1991, 1991 C LAS EL OPT, P42
[10]   EFFECTS OF ELECTRIC-FIELD ON ZNSE/ZNS STRAINED-LAYER SUPERLATTICES [J].
YOKOGAWA, T ;
SAITOH, T ;
NARUSAWA, T .
JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :550-553