2-DIMENSIONAL MICROSCOPIC UNIFORMITY OF RESISTIVITY IN SEMI-INSULATING GAAS

被引：27

作者：

MATSUMURA, T ^{[1
]}

OBOKATA, T ^{[1
]}

FUKUDA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1182 / 1185

页数：4

共 16 条

[1]

AMEY WG, 1949, P AM SOC TEST MATER, V49, P1079

[2] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES [J].

CHIN, AK ;

VONNEIDA, AR ;

CARUSO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2386-2388

[3]

COTTRELL AH, 1954, RELATION PROPERTIES, P131

[4] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

FAIRMAN, RD ;

CHEN, RT ;

OLIVER, JR ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :135-140

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149

[6]

Ishida K., UNPUB

[7] ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL [J].

KAMEJIMA, T ;

SHIMURA, F ;

MATSUMOTO, Y ;

WATANABE, H ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L721-L723

[8]

KITAHARA K, 1982, J ELECTROCHEM SOC, V129, P881

[9] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[10] INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS [J].

MATSUMOTO, Y ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L515-L517

← 1 2 →