CORRELATION BETWEEN ELECTRICAL AND STRUCTURAL-PROPERTIES OF CHLORINE DOPED ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

HOMMEL, D ^{[1
]}

JOBST, B ^{[1
]}

BEHR, T ^{[1
]}

BILGER, G ^{[1
]}

BEYERSDORFER, V ^{[1
]}

KURTZ, E ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] ZENTRUM SONNENENERGIE & WASSERSTOFFORSCH,D-70569 STUTTGART,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00002-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe epilayers have been studied by Van der Pauw measurements, C-V profiling, SIMS, TEM and X-ray diffraction in order to correlate electrical and structural properties. At least up to 10(19) cm-3, SIMS and electrical data are in good agreement, indicating a high efficiency of the chlorine incorporation at optimum growth conditions. Homogeneously and planar doped epilayers have been grown either directly on the (100) GaAs substrate or on an undoped, relaxed ZnSe buffer layer. For a given SIMS concentration of chlorine atoms, the free carrier concentration can be enhanced up to one order of magnitude for planar doped samples. The influence of a relaxed buffer layer on dopant activation and depth profile is discussed and correlated to dislocation distribution determined by TEM.

引用

页码：331 / 337

页数：7

共 14 条

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