X-RAY-DIFFRACTION STUDY OF THIN POROUS SILICON LAYERS

被引：27

作者：

LOMOV, AA ^{[1
]}

BELLET, D ^{[1
]}

DOLINO, G ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW 117333,RUSSIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 190卷 / 01期

关键词：

D O I：

10.1002/pssb.2221900130

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High resolution X-ray diffraction measurements are performed on porous silicon samples (p(+) type, 40% porosity) of various thicknesses (from 0.03 to 20 mu m). In the thicker samples narrow Bragg peaks are observed for as-formed samples, with profiles close to those of dynamical diffraction theory. For thin samples (in the 0.1 mu m range) the Bragg peak of the porous layer is not resolved, but appears as a shoulder on the substrate peak. Thickness fringes are observed, from which simulations give information on these thin PS layers, showing that the porous layer surfaces are well defined.

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页码：219 / 226

页数：8

相关论文

共 23 条

[1] DIFFRACTION SCATTERING AT ANGLES FAR FROM THE BRAGG ANGLE AND THE STRUCTURE OF THIN SUBSURFACE LAYERS [J].

AFANASEV, AM ;

ALEKSANDROV, PA ;

IMAMOV, RM ;

LOMOV, AA ;

ZAVYALOVA, AA .

ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 (JUL) :352-355

[2] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].

ANDREWS, SR ;

COWLEY, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35) :6427-6439

[3] DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].

BARLA, K ;

HERINO, R ;

BOMCHIL, G ;

PFISTER, JC ;

FREUND, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732

[4] X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

PFISTER, JC ;

BARUCHEL, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726

[5] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].

BARTELS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345

[6] X-RAY STUDY OF THE ANODIC-OXIDATION OF P+ POROUS SILICON [J].

BELLET, D ;

BILLAT, S ;

DOLINO, G ;

LIGEON, M ;

MEYER, C ;

MULLER, F .

SOLID STATE COMMUNICATIONS, 1993, 86 (01) :51-54

[7] STUDIES OF COHERENT AND DIFFUSE-X-RAY SCATTERING BY POROUS SILICON [J].

BELLET, D ;

DOLINO, G ;

LIGEON, M ;

BLANC, P ;

KRISCH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :145-149

[8] CHARACTERIZATION OF POROUS SILICON LAYERS BY GRAZING-INCIDENCE X-RAY-FLUORESCENCE AND DIFFRACTION [J].

BENSAID, A ;

PATRAT, G ;

BRUNEL, M ;

DEBERGEVIN, F ;

HERINO, R .

SOLID STATE COMMUNICATIONS, 1991, 79 (11) :923-928

[9] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[10] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338