DEFORMATION-POTENTIAL-THEORY CALCULATION OF THE ACOUSTIC-PHONON-LIMITED CONDUCTIVITY AND HALL MOBILITIES FOR P-TYPE SILICON

被引:10
作者
SZMULOWICZ, F
MADARASZ, FL
机构
来源
PHYSICAL REVIEW B | 1983年 / 27卷 / 04期
关键词
D O I
10.1103/PhysRevB.27.2605
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2605 / 2608
页数:4
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共 29 条
[11]   LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J].
LAWAETZ, P .
PHYSICAL REVIEW, 1968, 174 (03) :867-&
[12]   LONG-WAVELENGTH PHONON SCATTERING IN NONPOLAR SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW, 1969, 183 (03) :730-&
[14]   AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUM [J].
LINARES, LC ;
LI, SS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :601-608
[15]  
LIU JF, 1981, SOLID STATE ELECTRON, V24, P827
[16]   TRANSITION RATES FOR ACOUSTIC-PHONON-HOLE SCATTERING IN P-TYPE SILICON WITH NONPARABOLIC BANDS [J].
MADARASZ, FL ;
SZMULOWICZ, F .
PHYSICAL REVIEW B, 1981, 24 (08) :4611-4622
[17]   UNIAXIALLY STRESSED SILICON - FINE-STRUCTURE OF EXCITON AND DEFORMATION POTENTIALS [J].
MERLE, JC ;
CAPIZZI, M ;
FIORINI, P ;
FROVA, A .
PHYSICAL REVIEW B, 1978, 17 (12) :4821-4834
[18]   TEMPERATURE-DEPENDENCE OF THE HALL FACTOR AND THE CONDUCTIVITY MOBILITY IN PARA-TYPE SILICON [J].
MITCHEL, WC ;
HEMENGER, PM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6880-6884
[19]   VALENCE BANDSTRUCTURE AND HOLE MOBILITY IN SILICON [J].
NAKAGAWA, H ;
ZUKOTYNSKI, S .
CANADIAN JOURNAL OF PHYSICS, 1977, 55 (17) :1485-1491
[20]  
NAKAGAWA H, 1977, CAN J PHYS, V56, P364