DEFORMATION-POTENTIAL-THEORY CALCULATION OF THE ACOUSTIC-PHONON-LIMITED CONDUCTIVITY AND HALL MOBILITIES FOR P-TYPE SILICON

被引：10

作者：

SZMULOWICZ, F

MADARASZ, FL

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.27.2605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2605 / 2608

页数：4

共 29 条

[1] ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON [J].

ASCHE, M ;

VONBORZE.J .

PHYSICA STATUS SOLIDI, 1970, 37 (01) :433-&

[2]

BEER AC, 1958, PHYS REV, V100, P1286

[3] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J].

BROWN, DM ;

BRAY, R .

PHYSICAL REVIEW, 1962, 127 (05) :1593-&

[4] QUANTITATIVE PIEZOSPECTROSCOPY OF GROUND AND EXCITED-STATES OF ACCEPTORS IN SILICON [J].

CHANDRAS.HR ;

FISHER, P ;

RAMDAS, AK ;

RODRIGUE.S .

PHYSICAL REVIEW B, 1973, 8 (08) :3836-3851

[5] ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE [J].

COSTATO, M ;

FONTANESI, S ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :547-564

[6] OHMIC HOLE MOBILITY IN CUBIC SEMICONDUCTORS [J].

COSTATO, M ;

GAGLIANI, G ;

JACOBONI, C ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (12) :1605-1614

[7] DIE TEMPERATURABHANGIGKEIT DER DEFEKTELEKTRONENBEWEGLICHKEIT IN SILIZIUMKRISTALLEN [J].

ELSTNER, L .

PHYSICA STATUS SOLIDI, 1966, 17 (01) :139-&

[8] MAGNETOCONDUCTIVITY IN P-TYPE GERMANIUM [J].

GOLDBERG, C ;

ADAMS, EN ;

DAVIS, RE .

PHYSICAL REVIEW, 1957, 105 (03) :865-876

[9] DETERMINATION OF CARRIER DENSITIES IN LIGHTLY DOPED SILICON-CRYSTALS FROM THE HALL-EFFECT [J].

HACKMANN, A ;

NEUBERT, D ;

SCHERZ, U ;

SCHLIEF, R .

PHYSICAL REVIEW B, 1981, 24 (08) :4666-4683

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

← 1 2 3 →