OVERSHOOT SATURATION IN ULTRA-SUBMICRON FETS DUE TO MINIMUM ACCELERATION LENGTHS

被引：8

作者：

RYAN, JM ^{[1
]}

HAN, J ^{[1
]}

KRIMAN, AM ^{[1
]}

FERRY, DK ^{[1
]}

NEWMAN, P ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90282-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1609 / 1613

页数：5

相关论文

共 6 条

[1] VELOCITY OVERSHOOT IN ULTRA-SHORT-GATE-LENGTH GAAS-MESFETS
BERNSTEIN, G
FERRY, DK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 887 - 892
[2] ULTIMATE SCALING LIMITS FOR HIGH-FREQUENCY GAAS-MESFETS
GOLIO, JM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 839 - 848
[3] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS
HAUSER, JR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &
[4] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE
LEHOVEC, K
ZULEEG, R
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &
[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
[6] NON-EQUILIBRIUM HOT-CARRIER DIFFUSION PHENOMENON IN SEMICONDUCTORS .1. A THEORETICAL NON-MARKOVIAN APPROACH
ZIMMERMANN, J
LUGLI, P
FERRY, DK
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 95 - 101