VELOCITY OVERSHOOT IN ULTRA-SHORT-GATE-LENGTH GAAS-MESFETS

被引：35

作者：

BERNSTEIN, G

FERRY, DK

机构：

[1] Arizona State Univ, Tempe, AZ, USA, Arizona State Univ, Tempe, AZ, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Transport Properties - TRANSISTORS; FIELD EFFECT;

D O I：

10.1109/16.3340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs MESFETs with ultrashort gates between 0. 035 and 0. 065 mu m were fabricated to determine trends in their DC transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. An approximation based on the gradual channel approximation becomes valid at ultrashort gate lengths due to an increased percentage of the channel that is velocity-saturated.

引用

页码：887 / 892

页数：6

共 20 条

[1] FABRICATION OF ULTRA-SHORT GATE MESFETS AND BLOCHFETS BY ELECTRON-BEAM LITHOGRAPHY
BERNSTEIN, G
FERRY, DK
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (04) : 373 - 376
[2] ELECTRON-BEAM LITHOGRAPHIC FABRICATION OF ULTRA-SUBMICRON GATE GAAS-MESFETS
BERNSTEIN, G
FERRY, DK
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (02) : 147 - 150
[3] BERNSTEIN G, 1987, THESIS ARIZONA STATE
[4] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS
CARNEZ, B
CAPPY, A
KASZYNSKI, A
CONSTANT, E
SALMER, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790
[5] QUARTER MICRON LOW-NOISE GAAS-FETS
CHYE, PW
HUANG, C
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 401 - 403
[6] CURTICE WR, COMMUNICATION
[7] MILLIMETER-WAVE PERFORMANCE OF ULTRASUBMICROMETER-GATE FIELD-EFFECT TRANSISTORS - A COMPARISON OF MODFET, MESFET, AND PBT STRUCTURES
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1429 - 1440
[8] COMPARISON OF GAAS-MESFET NOISE FIGURES
GORONKIN, H
NAIR, V
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 47 - 49
[9] GORONKIN H, 1985, GALLIUM ARSENIDE TEC, P155
[10] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS
HAUSER, JR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

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