MICROSCOPIC ASPECTS OF OXYGEN PRECIPITATION IN SILICON

被引：14

作者：

PONCE, FA ^{[1
]}

HAHN, S ^{[1
]}

机构：

[1] SILTEC SILICON,MENLO PK,CA 94025

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90208-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11 / 17

页数：7

共 29 条

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[7] EFFECTS OF HIGH-CARBON CONCENTRATION UPON OXYGEN PRECIPITATION AND RELATED PHENOMENA IN CZSI [J].

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