ELECTRICAL-PROPERTIES OF SRF2/INP (100) DIODES AND SRF2 THIN-FILMS

被引：12

作者：

COUTURIER, G ^{[1
]}

CHAOUKI, A ^{[1
]}

RICARD, H ^{[1
]}

BARRIERE, AS ^{[1
]}

HAW, C ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,CRISTALLOG & PHYS CRISTALLINE LAB,F-33405 TALENCE,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：870 / 875

页数：6

共 18 条

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[5] DREVILLON B, 1986, VIDE, V41, P255
[6] DREVILLON B, 1986, VIDE, V41, P231
[7] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS
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[8] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 453 - 455
[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[10] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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