FACTORS INFLUENCING THE PERFORMANCE OF INP METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：6

作者：

CAMERON, DC ^{[1
]}

IRVING, LD ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

WOODWARD, J ^{[1
]}

BROWN, GT ^{[1
]}

COCKAYNE, B ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB, MALVERN WR14 3PS, WORCS, ENGLAND

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90425-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：61 / 70

页数：10

共 24 条

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[4]

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[9]

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[10] AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

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