PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS-GAAS HETEROSTRUCTURES

被引：12

作者：

NATHAN, MI

HEIBLUM, M

KLEM, J

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.582769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

7

引用

收藏

页码：167 / 169

页数：3

相关论文

共 7 条

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[4] PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE
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[5] PERSISTENT PHOTO-CONDUCTANCE AND PHOTOQUENCHING OF SELECTIVELY DOPED AL0.3GA0.7AS GAAS HETEROJUNCTIONS
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[6] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
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[7] TANOUE T, 1982, 2ND INT S MBE REL SU, P143