GROWTH OF CERAMIC THIN-FILMS ON SI(100) USING AN INSITU LASER DEPOSITION TECHNIQUE

We have investigated the formation of MgO and yttria-stabilized ZrO2 (YSZ) thin films on Si(100) substrates using laser (wavelength 248 nm pulse duration 40 ns, and repetition rate 5 Hz) physical vapor deposition method. The films were deposited from solid targets of MgO and polycrystalline YSZ in appropriate ambient with the substrate temperature optimized at 650-degrees-C. The absorption coefficient in the MgO target was enhanced by Ni doping. The films were characterized using scanning and transmission electron microscopy (plan and cross section), x-ray diffraction, and Rutherford-backscattering spectrometry. The films were found to be polycrystalline with a texture. The thin films of MgO exhibited <111> texture, while the YSZ films contained both <111> and <200> textures.