ABOVE-BARRIER RESONANT TRANSITIONS IN ALXGA1-XAS/ALAS/GAAS HETEROSTRUCTURES

被引：10

作者：

COLOCCI, M ^{[1
]}

MARTINEZPASTOR, J ^{[1
]}

GURIOLI, M ^{[1
]}

机构：

[1] UNIV FLORENCE,DEPT PHYS,I-50125 FLORENCE,ITALY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.48.8089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we demonstrate the existence of above-barrier quasibound states in Al0.3Ga0.7As/AlAs/GaAs double-barrier quantum-well structures, by using both continuous-wave and time-resolved photoluminescence techniques in addition to reflectivity measurements. A series of clearly resolved resonances is found in the optical spectra. Their energy positions agree fairly well with the energies found for the quasibound states when analyzing the density of states of the heterostructure continuous spectrum. As shown by the analysis of the envelope wave function these resonances are localized in the Al0.3Ga0.7As barrier regions and are found to induce both an increase of the interband absorption and a reduction of the carrier capture efficiency into the wells.

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页码：8089 / 8094

页数：6

相关论文

共 13 条

[1]

CHEN Y, 1991, APPL PHYS LETT, V58, P2111

[2] OBSERVATION OF ABOVE-BARRIER QUASI-BOUND STATES IN ASYMMETRIC SINGLE QUANTUM-WELLS BY PIEZOMODULATED REFLECTIVITY [J].

DOSSA, D ;

VOON, LCLY ;

RAMMOHAN, LR ;

PARKS, C ;

ALONSO, RG ;

RAMDAS, AK ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1991, 59 (21) :2706-2708

[3] THERMAL ESCAPE OF CARRIERS OUT OF GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].

GURIOLI, M ;

MARTINEZPASTOR, J ;

COLOCCI, M ;

DEPARIS, C ;

CHASTAINGT, B ;

MASSIES, J .

PHYSICAL REVIEW B, 1992, 46 (11) :6922-6927

[4] ABSORPTION IN GAAS/GA1-XALXAS QUANTUM-WELLS WITH RESONANT BARRIERS FOR IMPROVED RESPONSIVITY [J].

KILEDJIAN, MS ;

SCHULMAN, JN ;

WANG, KL .

PHYSICAL REVIEW B, 1991, 44 (11) :5616-5621

[5] CONFINED ELECTRON-STATES IN ULTRATHIN ALAS SINGLE QUANTUM-WELLS UNDER PRESSURE [J].

LEROUX, M ;

GRANDJEAN, N ;

CHASTAINGT, B ;

DEPARIS, C ;

NEU, G ;

MASSIES, J .

PHYSICAL REVIEW B, 1992, 45 (20) :11846-11853

[6] BOUND-TO-EXTENDED STATE ABSORPTION GAAS SUPERLATTICE TRANSPORT INFRARED DETECTORS [J].

LEVINE, BF ;

BETHEA, CG ;

CHOI, KK ;

WALKER, J ;

MALIK, RJ .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1591-1593

[7] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

CHOI, KK ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[8] EXCITON DELOCALIZATION IN THIN DOUBLE-BARRIER GAAS/ALAS/(AL,GA)AS QUANTUM-WELL STRUCTURES [J].

MARTINEZPASTOR, J ;

GURIOLI, M ;

COLOCCI, M ;

DEPARIS, C ;

CHASTAINGT, B ;

MASSIES, J .

PHYSICAL REVIEW B, 1992, 46 (04) :2239-2243

[9] INTERSUBBAND ABSORPTION AND INFRARED PHOTODETECTION AT 3.5 AND 4.2 MU-M IN GAAS QUANTUM-WELLS [J].

SCHNEIDER, H ;

FUCHS, F ;

DISCHLER, B ;

RALSTON, JD ;

KOIDL, P .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2234-2236

[10] DENSITY OF STATES IN A RESONANT-TUNNELING STRUCTURE [J].

TRZECIAKOWSKI, W ;

SAHU, D ;

GEORGE, TF .

PHYSICAL REVIEW B, 1989, 40 (09) :6058-6062