EXCITON DELOCALIZATION IN THIN DOUBLE-BARRIER GAAS/ALAS/(AL,GA)AS QUANTUM-WELL STRUCTURES

被引：9

作者：

MARTINEZPASTOR, J

GURIOLI, M

COLOCCI, M

DEPARIS, C

CHASTAINGT, B

MASSIES, J

机构：

[1] UNIV FLORENCE,DIPARTIMENTO FIS,I-50125 FLORENCE,ITALY

[2] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.46.2239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nonconventional GaAs/Al1-xGaxAs quantum-well structures, with one or two monolayers of AlAs inserted between the GaAs layers and the Al1-xGaxAs barriers (double-barrier quantum wells), have been investigated to observe the quasi-three-dimensional behavior of the excitons in thin quantum wells. These samples provide higher confinement energies than single quantum wells of the same thickness, in such a way that relatively thick wells produce shallow carrier subbands. An increase of the photoluminescence lifetime of excitons has been found when narrowing the well thickness. The analysis of intensity and shape of the photoluminescence spectra made us confident in interpreting this increase as an effect of the exciton delocalization, and a qualitative agreement with a simple model for the exciton radiative lifetime is obtained.

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页码：2239 / 2243

页数：5

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