BAND-GAP SHRINKAGE OF SEMICONDUCTORS

被引:65
作者
AUVERGNE, D [1 ]
CAMASSEL, J [1 ]
MATHIEU, H [1 ]
机构
[1] UNIV SCI & TECH LANGUEDOC, CNRS, CTR ETUD ELECTR SOLIDES, PL E BATAILLON, 34060 MONTPELLIER, FRANCE
关键词
D O I
10.1103/PhysRevB.11.2251
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2251 / 2259
页数:9
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共 30 条
[21]   BAND TRAILINGS IN STRONGLY DOPED GASB [J].
MATHIEU, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (01) :67-+
[22]  
MATHIEU H, UNPUBLISHED
[23]   OPTICAL ABSORPTION OF ARSENIC-DOPED DEGENERATE GERMANIUM [J].
PANKOVE, JI ;
AIGRAIN, P .
PHYSICAL REVIEW, 1962, 126 (03) :956-&
[24]   ENERGY LEVELS OF A DISORDERED ALLOY [J].
PARMENTER, RH .
PHYSICAL REVIEW, 1955, 97 (03) :587-598
[25]   ENERGY LEVELS OF A DISORDERED ALLOY [J].
PARMENTER, RH .
PHYSICAL REVIEW, 1956, 104 (01) :22-32
[26]  
Phillips J.C., 1973, BONDS BANDS SEMICOND, P22
[27]   DETERMINATION OF DONOR LEVEL OF TELLURIM IN GASB [J].
PISTOULET, B ;
ROBERT, JL ;
BARJON, D .
SOLID STATE COMMUNICATIONS, 1970, 8 (11) :897-+
[28]   Determination of the Energy Separation Delta E-c of the two Minima of the Conduction Band of GaSb and Its Variation with Temperature [J].
Robert, J. L. ;
Barjon, D. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (02) :421-429
[29]   THRESHOLD REQUIREMENTS AND CARRIER INTERACTION EFFECTS IN GAAS PLATELET LASERS (77 DEGREES K) [J].
ROSSI, JA ;
KEUNE, KL ;
HOLONYAK, N ;
DAPKUS, PD ;
BURNHAM, RD .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :312-+
[30]   THEORY OF BAND STRUCTURE OF VERY DEGENERATE SEMICONDUCTORS [J].
WOLFF, PA .
PHYSICAL REVIEW, 1962, 126 (02) :405-&