DEPENDENCE OF SILVER DISTRIBUTIONS IN ELECTRON-BEAM-EXPOSED REGIONS ON DOSAGE AS WELL AS ON THE THICKNESSES OF DRY-SENSITIZED LAYERS AND CHALCOGENIDE GLASS-FILMS

被引：17

作者：

LIANG, YC

TADA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4494 / 4498

页数：5

共 13 条

[1]

Borisova Z.U., 1981, GLASSY SEMICONDUCTOR

[2] ELECTRON-BEAM INVESTIGATION AND USE OF GE-SE INORGANIC RESIST [J].

CHEN, AS ;

ADDIEGO, G ;

LEUNG, W ;

NEUREUTHER, AR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :398-402

[3]

DOANE DA, P S INORGANIC RESIST, V82

[4] SILVER DISTRIBUTION IN WET-SENSITIZED AS10GE22.5SE67.5 FILMS AFTER ELECTRON-BEAM EXPOSURE [J].

LIANG, YC ;

TADA, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1378-1383

[5]

LIS SA, 1983, P SOC PHOTO-OPT INST, V393, P34, DOI 10.1117/12.935091

[6]

POLASKO KJ, 1983, P SOC PHOTO-OPT INST, V393, P27, DOI 10.1117/12.935090

[7] ELECTROCHEMICAL ADSORPTION OF METALS ON AMORPHOUS SE-GE FILMS [J].

SINGH, B ;

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :428-433

[8]

TAI KL, 1979, EL SOC EXT ABS, V791, P244

[9]

UTSUGI Y, 1984, ELECTROCHEM SOC EXT, V842, P774

[10] GERMANIUM SELENIDE - A RESIST FOR LOW-ENERGY ION-BEAM LITHOGRAPHY [J].

WAGNER, A ;

BARR, D ;

VENKATESAN, T ;

CRANE, WS ;

LAMBERTI, VE ;

TAI, KL ;

VADIMSKY, RG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1363-1367

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