OPTICAL-PROPERTIES OF WIDE-GAP II-VI ZNTE EPILAYERS

被引：3

作者：

AVEROUS, M

ABOUNADI, A

AULOMBARD, RL

BOUCHARA, D

BRIOT, N

BRIOT, O

CALAS, J

CLOITRE, T

GIL, B

机构：

[1] Groupe d'Etudes des Semiconducteurs, Université de Montpellier II

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 181卷 / 02期

关键词：

D O I：

10.1002/pssb.2221810218

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The optical properties of ZnTe epilayers grown by low-pressure metal organic vapour phase epitaxy on GaAs and GaSb substrates are studied. The layers are grown by using the halide-free triethylamine dimethylzinc adduct and di-isopropyl telluride as zinc and tellurium precursors, respectively. A detailed analysis of the residual strain is offered as a function of layer thickness and substrate nature via reflectivity measurements performed at pumped liquid helium temperature. This is completed by an extensive analysis of near-band-edge photoluminescence spectra in order to discriminate the contribution of residual impurities. Using these precursors ZnTe layers with extremely low contamination rates are obtained.

引用

收藏

页码：427 / 437

页数：11

相关论文

共 34 条

[1]

CHENG H, 1993, J CRYST GROWTH, V127, P279

[2] UNIFIED THEORY OF SYMMETRY-BREAKING EFFECTS ON EXCITONS IN CUBIC AND WURTZITE STRUCTURES [J].

CHO, K .

PHYSICAL REVIEW B, 1976, 14 (10) :4463-4482

[3] OPTICAL CHARACTERIZATION OF EXTREMELY HIGH-PURITY ZNSE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLZINC TRIETHYLAMINE ADDUCT [J].

CLOITRE, T ;

BRIOT, N ;

BRIOT, O ;

GIL, B ;

AULOMBARD, RL ;

JONES, AC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3) :169-173

[4] LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZNTE USING TRIETHYLAMINE DIMETHYL ZINC ADDUCT [J].

CLOITRE, T ;

BRIOT, N ;

BRIOT, O ;

GIL, B ;

AULOMBARD, RL .

JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) :101-107

[5]

CLOITRE T, 1992, THESIS U MONTPELLIER

[6] A GENUINE NEUTRAL DOUBLE ACCEPTOR IN A II-VI SEMICONDUCTOR - SITE(QUESTIONABLE) IN ZNTE [J].

DEAN, PJ ;

KANE, MJ ;

MAGNEA, N ;

DEMAIGRET, F ;

DANG, LS ;

NAHMANI, A ;

ROMESTAIN, R ;

SKOLNICK, MS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (33) :6185-6198

[7] ZNTE/GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH [J].

ETGENS, VH ;

SAUVAGESIMKIN, M ;

PINCHAUX, R ;

MASSIES, J ;

JEDRECY, N ;

WALDHAUER, A ;

TATARENKO, S ;

JOUNEAU, PH .

PHYSICAL REVIEW B, 1993, 47 (16) :10607-10612

[8] STRUCTURAL-PROPERTIES OF III-V ZINCBLENDE SEMICONDUCTORS UNDER PRESSURE [J].

FROYEN, S ;

COHEN, ML .

PHYSICAL REVIEW B, 1983, 28 (06) :3258-3265

[9] EPITAXY-INDUCED STRUCTURAL PHASE-TRANSFORMATIONS [J].

FROYEN, S ;

WEI, SH ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 38 (14) :10124-10127

[10] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF NITROGEN-DOPED ZNSE USING TERTIARYBUTYLAMINE AS DOPING SOURCE [J].

FUJITA, S ;

ASANO, T ;

MAEHARA, K ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B) :L1153-L1156

← 1 2 3 4 →