CHARACTERIZATION OF ELECTRICAL AND OPTICAL LOSS OF MOCVD REGROWTH IN STRAINED LAYER INGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：5

作者：

COCKERILL, TM

HONIG, J

FORBES, DV

BEERNINK, KJ

COLEMAN, JJ

机构：

[1] Materials Research Laboratory, Microelectronics Laboratory, University of Illinois, Urbana, IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(92)90516-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of epitaxial regrowth on the electrical and optical properties of semiconductor lasers are investigated. Threshold current density and differential quantum efficiency versus cavity length for several companion uninterrupted and regrown structures are analyzed self-consistently to separately quantify the electrical and optical properties of the epitaxial regrowth interface and the initial regrown material. A reduction in internal quantum efficiency for regrown lasers indicates increased nonradiative carrier recombination at the regrowth interface. Increases in the internal loss indicate increased photon absorption in the initial regrown material.

引用

页码：553 / 557

页数：5

共 14 条

[1]

Casey H.C., 1978, HETEROSTRUCTURE LASE

[2]

COLEMAN JJ, IN PRESS IEEE J QUAN

[3] REGROWTH OF IN0.53GA0.47AS/INP P-N HETEROJUNCTIONS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].