REGROWTH OF IN0.53GA0.47AS/INP P-N HETEROJUNCTIONS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

FREI, MR

HAYES, JR

SHIROKMANN, HF

CANEAU, C

机构：

[1] Bellcore, Red Bank

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quality of interfaces regrown by organometallic chemical vapor deposition is evaluated from the electrical characteristics of In0.53Ga0.47As/InP p-n heterojunction diodes. The I-V curves are undistinguishable from those of junctions obtained by continuous growth, with ideality factors eta almost-equal-to 1.1 and no observable contribution from interface recombination in the measured current range. An upper limit of 200 cm/s is obtained for the interface recombination velocity. The results show that high-quality interfaces can be obtained in spite of prior air exposure. The technique can be used for the realization of regrown heterojunction bipolar transistors.

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页码：3967 / 3969

页数：3

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