LONG-LIVED MOCVD-GROWN 780NM SBA LASER WITH REDUCED INFLUENCE OF REGROWTH INTERFACE

被引：4

作者：

MIHASHI, Y ^{[1
]}

NAGAI, Y ^{[1
]}

OHTA, Y ^{[1
]}

TANAKA, T ^{[1
]}

IKEDA, K ^{[1
]}

SUSAKI, W ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90624-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：814 / 819

页数：6

共 13 条

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