THE NONIDEAL CURRENT IN BIPOLAR-TRANSISTORS

被引：2

作者：

JONES, BK

KATAI, VO

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期

关键词：

D O I：

10.1016/0038-1101(87)90137-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：987 / 989

页数：3

共 13 条

[1] THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N-JUNCTIONS [J].

ASHBURN, P ;

MORGAN, DV ;

HOWES, MJ .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :569-577

[2] ON THEORY OF LOGARITHMIC SILICON DIODES [J].

BUCKINGH.MJ ;

FAULKNER, EA .

RADIO AND ELECTRONIC ENGINEER, 1969, 38 (01) :33-+

[3] CORRELATIONS BETWEEN 1/F NOISE AND DC CHARACTERISTICS IN BIPOLAR-TRANSISTORS [J].

GREEN, CT ;

JONES, BK .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (11) :2269-2275

[4] 1/F NOISE IN BIPOLAR-TRANSISTORS [J].

GREEN, CT ;

JONES, BK .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (01) :77-91

[5]

GREEN CT, 1984, THESIS U LANCASTER U

[6]

LEFFERTS RB, 1981, THESIS STANFORD U US

[7] GENERATION-RECOMBINATION CHARACTERISTIC BEHAVIOR OF SILICON DIODES [J].

NUSSBAUM, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (02) :441-450

[8]

NUSSBAUM A, 1981, SEMICONDUCT SEMIMET, V15, pCH2

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[10]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

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