COMPARISON OF SCHOTTKY-BARRIER HEIGHTS OF COSI2 FORMED FROM EVAPORATED OR CRYSTALLINE SI

被引：5

作者：

LIEN, CD

FINETTI, M

NICOLET, MA

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 35卷 / 01期

关键词：

D O I：

10.1007/BF00620299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 50

页数：4

共 8 条

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[2]

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[3]

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[4]

NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, pCH6

[5]

SZE SM, 1982, PHYSICS SEMICONDUCTO

[6] SHALLOW PTSI-SI SCHOTTKY-BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUE [J].

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SILVERSMITH, DJ ;

MOUNTAIN, RW ;

HUNG, LS ;

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SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5243-5246

[7] SHALLOW SILICIDE CONTACT [J].

TU, KN ;

HAMMER, WN ;

OLOWOLAFE, JO .

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[8] COBALT SILICIDE LAYERS ON SI .2. SCHOTTKY-BARRIER HEIGHT AND CONTACT RESISTIVITY [J].

VANGURP, GJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4308-4311

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