RAMAN-SCATTERING BY INTERVALLEY CARRIER-DENSITY FLUCTUATIONS IN N-TYPE GE - UNIAXIAL-STRESS AND RESONANCE EFFECTS

被引：28

作者：

CONTRERAS, G ^{[1
]}

SOOD, AK ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.930

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：930 / 933

页数：4

共 19 条

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[8] THE E1-E1+DELTA-1 TRANSITIONS IN BULK GROWN AND IN IMPLANTED LASER ANNEALED HEAVILY DOPED GERMANIUM - LUMINESCENCE [J].

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[9]

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