INTERFACE DEMARCATION DURING LPE GROWTH OF GAAS

被引：7

作者：

BLOM, GM

DANIELE, JJ

KYROS, T

WITT, AF

机构：

[1] PHILIPS LABS, BRIARCLIFF MANOR, NY 10510 USA

[2] MIT, DEPT MAT SCI, CAMBRIDGE, MA 02138 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 11期

关键词：

D O I：

10.1149/1.2134059

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1541 / 1544

页数：4

共 19 条

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[13] COMPARISON OF THEORY AND EXPERIMENT FOR LPE LAYER THICKNESS OF GAAS AND GAAS ALLOYS [J].

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[14]

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[15]

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[17] ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].

RODE, DL .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :13-23

[18] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS [J].

SAUL, RH ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :1983-1988

[19] APPLICATION OF INTERFACE DEMARCATION TO STUDY OF FACET GROWTH AND SEGREGATION - GERMANIUM [J].

WITT, AF ;

LICHTENSTEIGER, M ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :787-790

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