STRESSES INDUCED IN GAAS BY TIPT OHMIC CONTACTS

[1] AFRAMOWITZ MA, 1974, J APPL PHYS, V45, P4738

[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[3] STRESS COMPENSATION IN GAAS-AL0.24GA0.76AS1-YPY LPE BINARY LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4735 - 4737

[4] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 661 - 669

[5] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149

[6] INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) : 233 - 240

[7] DARK-LINE DEFECTS INDUCED BY MECHANICAL BENDING IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 488 - 490

[8] LYNCH CJ, 1975, HDB MATERIAL SCI, V2, P296

[9] GROWTH AND PROPAGATION MECHANISM OF (110)-ORIENTED DARK-LINE DEFECTS IN GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2771 - 2775

[10] PEARSON WB, 1958, HDB LATTICE SPACINGS, P623

[1] AFRAMOWITZ MA, 1974, J APPL PHYS, V45, P4738

[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[3] STRESS COMPENSATION IN GAAS-AL0.24GA0.76AS1-YPY LPE BINARY LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4735 - 4737

[4] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 661 - 669

[5] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149

[6] INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) : 233 - 240

[7] DARK-LINE DEFECTS INDUCED BY MECHANICAL BENDING IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 488 - 490

[8] LYNCH CJ, 1975, HDB MATERIAL SCI, V2, P296

[9] GROWTH AND PROPAGATION MECHANISM OF (110)-ORIENTED DARK-LINE DEFECTS IN GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2771 - 2775

[10] PEARSON WB, 1958, HDB LATTICE SPACINGS, P623