COMPARATIVE STUDIES OF DEFECTS IN GAAS ON SILICON SUBSTRATES USING ELECTRON-BEAM-INDUCED CURRENT AND TRANSMISSION ELECTRON-MICROSCOPY

被引：2

作者：

HUMPHREYS, TP ^{[1
]}

HAMAGUCHI, N ^{[1
]}

BEDAIR, SM ^{[1
]}

TARN, JCL ^{[1
]}

ELMASRY, N ^{[1
]}

RADZIMSKI, ZJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3763 / 3765

页数：3

共 11 条

[1] DEFECT REDUCTION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIFFERENT SUPERLATTICE STRUCTURES [J].

BEDAIR, SM ;

HUMPHREYS, TP ;

ELMASRY, NA ;

LO, Y ;

HAMAGUCHI, N ;

LAMP, CD ;

TUTTLE, AA ;

DREIFUS, DL ;

RUSSELL, P .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :942-944

[2] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE [J].

BEDAIR, SM ;

KATSUYAMA, T ;

TIMMONS, M ;

TISCHLER, MA .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :45-47

[3] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[4] SCANNING ELECTRON-MICROSCOPE EBIC AND CL MICROGRAPHS OF DISLOCATIONS IN GAP [J].

DARBY, DB ;

BOOKER, GR .

JOURNAL OF MATERIALS SCIENCE, 1977, 12 (09) :1827-1833

[5] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J].

ELMASRY, N ;

TARN, JCL ;

HUMPHREYS, TP ;

HAMAGUCHI, N ;

KARAM, NH ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1608-1610

[6] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[7] PHOTOLUMINESCENCE MICROSCOPY OF EPITAXIAL GAAS ON SI [J].

GOURLEY, PL ;

LONGERBONE, M ;

ZHANG, SL ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :599-601

[8] DISLOCATION FILTERING IN SEMICONDUCTOR SUPERLATTICES WITH LATTICE-MATCHED AND LATTICE-MISMATCHED LAYER MATERIALS [J].

GOURLEY, PL ;

DRUMMOND, TJ ;

DOYLE, BL .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1101-1103

[9] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J].

GOURLEY, PL ;

BIEFELD, RM ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :482-484

[10]

KROEMER H, 1986, MATER RES SOC S P, V67, P3

← 1 2 →