INFLUENCE OF DEFECT SITE TRANSITIONS ON DISCRETE RESISTANCE FLUCTUATIONS IN NORMAL-METAL TUNNEL-JUNCTIONS

被引：5

作者：

JIANG, XG

GARLAND, JC

机构：

[1] Department of Physics, Ohio State University, Columbus

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.66.496

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurements of discrete resistance fluctuations in novel metal-insulator-metal-insulator-metal tunnel junctions show the presence of single ionic defects that can be moved reversibly between adjacent lattice sites in the insulating barrier. By analyzing the change in switching lifetimes and junction conductance resulting from these displacements, it is concluded that electron tunneling is the dominant trapping mechanism, rather than metastable transitions of the defect state.

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页码：496 / 499

页数：4

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