IMPACT COLLISION ION SPECTROMETRY STUDIES OF THE NISI2(111) SURFACE

被引：9

作者：

PORTER, TL ^{[1
]}

CORNELISON, DM ^{[1
]}

CHANG, CS ^{[1
]}

TSONG, IST ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576722

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The technique of impact collision ion scattering spectrometry (ICISS) was used to study the composition and structure of the NiSi2( 111) type B surface. Comparison of experimental data with computer simulation indicates that the surface consists of a Si bulk termination of the fluorite structure with an additional Si bilayer on top. These results are consistent with an additional Si bilayer model proposed from photoemission and scanning tunneling microscopy studies. © 1990, American Vacuum Society. All rights reserved.

引用

页码：2497 / 2500

页数：4

共 20 条

[1]

[Anonymous], 1958, HDB LATTICE SPACINGS

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[3] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J].

CHAMBERS, SA ;

ANDERSON, SB ;

CHEN, HW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 34 (02) :913-920

[4] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[5] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J].

CHIU, KCR ;

POATE, JM ;

ROWE, JE ;

SHENG, TT ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :988-990

[6] THEORY OF AUGER EJECTION OF ELECTRONS FROM METALS BY IONS [J].

HAGSTRUM, HD .

PHYSICAL REVIEW, 1954, 96 (02) :336-365

[7] SURFACE-STRUCTURE OF THIN EPITAXIAL COSI2 GROWN ON SI(111) [J].

HELLMAN, F ;

TUNG, RT .

PHYSICAL REVIEW B, 1988, 37 (18) :10786-10794

[8] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J].

HENSEL, JC ;

LEVI, AFJ ;

TUNG, RT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :151-153

[9] SURFACE-STRUCTURE OF EPITAXIAL NISI2 GROWN ON SI(001) DETERMINED BY LOW-ENERGY ION-SCATTERING TECHNIQUES [J].

HUANG, JH ;

DALEY, RS ;

SHUH, DK ;

WILLIAMS, RS .

SURFACE SCIENCE, 1987, 186 (1-2) :115-137

[10]

Phillips J.M., 1987, MATTER RES SOC, P365

← 1 2 →