PLASMA-SURFACE INTERACTIONS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

HESS, DW

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1986年 / 16卷

关键词：

D O I：

10.1146/annurev.ms.16.080186.001115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：163 / 183

页数：21

共 98 条

[71]

SHEN M, 1976, PLASMA CHEM POLYM

[72]

SHEN M, 1979, ACS S SERIES, V108

[73] PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED AND EPITAXIAL-FILMS OF ZNO AT LOW SUBSTRATE TEMPERATURES [J].

SHIOSAKI, T ;

YAMAMOTO, T ;

YAGI, M ;

KAWABATA, A .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :399-401

[74] RECOIL IMPLANTATION AND ION-BEAM-INDUCED COMPOSITION CHANGES IN ALLOYS AND COMPOUNDS [J].

SIGMUND, P .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7261-7263

[75] MECHANISM OF SURFACE MICRO-ROUGHENING BY ION-BOMBARDMENT [J].

SIGMUND, P .

JOURNAL OF MATERIALS SCIENCE, 1973, 8 (11) :1545-1553

[76]

Sigmund P., 1981, INELASTIC PARTICLE S, P2

[77] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE ;

QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

[78] ION BOMBARDMENT OF SILICON IN A GLOW DISCHARGE [J].

STRACK, H .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2405-&

[79] EFFECT OF SI-GE BUFFER LAYER FOR LOW-TEMPERATURE SI EPITAXIAL-GROWTH ON SI SUBSTRATE BY RF PLASMA CHEMICAL VAPOR-DEPOSITION [J].

SUZUKI, S ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1466-1470

[80] OPTICAL AND THERMAL-PROPERTIES OF BEO THIN-FILMS PREPARED BY REACTIVE IONIZED-CLUSTER BEAM TECHNIQUE [J].

TAKAGI, T ;

MATSUBARA, K ;

TAKAOKA, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5419-5424

← 1 2 3 4 5 6 7 8 9 10 →