DEPOSITION OF CR-SI THIN-FILMS BY REACTIVE PLASMATRON-MAGNETRON SPUTTERING

被引：19

作者：

SOBE, G ^{[1
]}

SCHREIBER, H ^{[1
]}

WEISE, G ^{[1
]}

VOIGTMANN, R ^{[1
]}

ZIES, G ^{[1
]}

SONNTAG, J ^{[1
]}

BRUCKNER, W ^{[1
]}

GROTZSCHEL, R ^{[1
]}

机构：

[1] ZENT INST KERNFORSCH ROSSENDORF, DDR-8051 DRESDEN, GERMANY

来源：

THIN SOLID FILMS | 1985年 / 128卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90343-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 159

页数：11

共 12 条

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[8] USE OF RING GAP PLASMATRON FOR HIGH-RATE SPUTTERING [J].

SCHILLER, S ;

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[9] REACTIVE DC SPUTTERING WITH THE MAGNETRON-PLASMATRON FOR TANTALUM PENTOXIDE AND TITANIUM-DIOXIDE FILMS [J].

SCHILLER, S ;

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[10]

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