MOLECULAR-BEAM EPITAXY FLUX TRANSIENT MONITORING AND CORRECTION USING INSITU REFLECTION MASS-SPECTROMETRY

被引：18

作者：

CELII, FG

KAO, YC

BEAM, EA

DUNCAN, WM

MOISE, TS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of reflection mass spectrometry (REMS) for in situ monitoring of group III flux transients during molecular-beam epitaxial growth is reported. Normal shutter closure caused effusion cell heating which resulted in flux overshoots of up to 30%. The variation of the magnitude and time constant of the overshoot, as a function of group III material and shutter closed time, was determined for our Riber 2300 system. It was verified that the observed REMS transients corresponds to growth transients using photoluminescence and transmission electron microscopy analysis of GaAs/AlGaAs and InGaAs/InAlAs multiple quantum well (MQW) structures. Flux transient correction during GaAs/AlGaAs MQW growth was accomplished by ramping the temperature of the Ga effusion cell, based on our previous analysis of the transients.

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页码：1018 / 1022

页数：5

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