OBSERVATION OF RADIATIVE AND NONRADIATIVE TUNNELING IN GAAS/ALXGA1-XAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH COMPOSITIONALLY GRADED BASE-EMITTER HETEROJUNCTIONS

被引：6

作者：

DELYON, TJ

CASEY, HC

ENQUIST, PM

HUTCHBY, JA

SPRINGTHORPE, AJ

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706

[2] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[3] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3282 / 3285

页数：4

共 13 条

[1] RADIATIVE TUNNELING IN GAAS ABRUPT ASYMMETRICAL JUNCTIONS [J].

CASEY, HC ;

SILVERSMITH, DJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :241-+

[2] DOPING EFFECTS AND COMPOSITIONAL GRADING IN AL GA1-AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHAND, N ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1064-1069

[3] CURRENT VOLTAGE CHARACTERISTICS OF N-ALGAAS/P-GAAS HETEROJUNCTION DIODES [J].

CHAND, N ;

FISCHER, R ;

KLEM, J ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :605-608

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[5] SURFACE RECOMBINATION CURRENT AND EMITTER COMPOSITIONAL GRADING IN NPN AND PNP GAAS ALXGA1-XAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

DELYON, TJ ;

CASEY, HC ;

ENQUIST, PM ;

HUTCHBY, JA ;

SPRINGTHORPE, AJ .

APPLIED PHYSICS LETTERS, 1989, 54 (07) :641-643

[6] PROPERTIES OF GALLIUM ARSENIDE DIODES BETWEEN 4.2 DEGREES AND 300 DEGREES K [J].

DUMIN, DJ ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3418-&

[7] COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

ENQUIST, PM ;

RAMBERG, LP ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2663-2669

[8] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[9] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04) :L241-L243

[10] RECOMBINATION BY TUNNELING IN ELECTROLUMINESCENT RIODES [J].

MORGAN, TN .

PHYSICAL REVIEW, 1966, 148 (02) :890-&

← 1 2 →