OMCVD GROWTH OF GAAS AND ALGAAS USING A SOLID AS SOURCE

被引：32

作者：

BHAT, R

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 04期

关键词：

D O I：

10.1007/BF02654017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 449

页数：17

共 23 条

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[20] MINORITY-CARRIER LIFETIME AND LUMINESCENCE IN MOVPE-GROWN (AL,GA)AS EPILAYERS AND DH LASERS [J].

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