IN-BASED P-OHMIC CONTACTS TO THE BASE LAYER OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：10

作者：

REN, F ^{[1
]}

PEARTON, SJ ^{[1
]}

HOBSON, WS ^{[1
]}

FULLOWAN, TR ^{[1
]}

EMERSON, AB ^{[1
]}

SCHLEICH, DM ^{[1
]}

机构：

[1] POLYTECH INST NEW YORK, BROOKLYN, NY 11201 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reliable p ohmic contact for AlGaAs/GaAs heterojunction bipolar transistor (HBT) using AuBe-In/Ag/Au is presented. Excellent morphology after annealing at 400-degrees-C for 20 s was observed and a transfer resistance of 0.095-OMEGA-mm obtained on p+-GaAs (1 X 10(19) cm-3). Silver acts as a diffusion barrier to prevent Au spikes which will degrade the performance of the thin base layer HBT. The indium layer is highly desirable to reduce the contact resistance by forming the InGaAs phase at metal-GaAs interfaces. Beryllium is the p-type dopant and a top gold layer is used to lower the sheet resistance of the contact metals. The mode of current transport is dominant by tunneling through the barrier due to field emission in the heavily doped materials.

引用

页码：1158 / 1160

页数：3

共 8 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].