THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF HGCDTE ON GAAS AT 300-DEGREES-C USING DIISOPROPYLTELLURIDE

被引：11

作者：

KORENSTEIN, R

HALLOCK, P

MACLEOD, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.585435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HgCdTe was grown by the metalorganic chemical vapor deposition alloy process on (111)B CdTe/GaAs and (111)B CdTe substrates at 300-degrees-C using diisopropyltelluride, dimethylcadmium, and elemental mercury. Excellent surface morphology and compositional uniformity were obtained at this temperature. Hall effect measurements indicate that n-type (111) HgCdTe with carrier concentration below 10(15) cm-3 and good mobilities at 77 K can be obtained on GaAs substrates.

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页码：1630 / 1633

页数：4

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